* 650V@TJ=25°C
* Typ.RDS(on)=0.57Ω
* Low gate charge
* 100% avalanche tested
* 100% Rg tested D GDS TOT-O22- 0 12N65 12N65F G S GD S TO-220F .

power switching application and a wide variety of other applications. WNM12N65/WNM12N65F Features
* 650V@TJ=25°C <.

The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power.

WNM12N65

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WNM01N11

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WNM05N60F

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WNM07N60F

WNM07N65

WNM07N65F

WNM2016

WNM2020

WNM2020-3

WNM2021

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